报告题目：HgCdTe semiconductor optoelectronics: Material, Physics, and Device Applications

报告人：雷文博士

单位：西澳大利亚大学

时间：2017年8月29日上午10:00

地点：博逸楼401会议室

报告内容：

HgCdTe infrared detectors have dominated the high performance end of infrared imaging market for decades due to their unbeatable device performance. However, the further development (next generation) of infrared applications requires the detectors to have lower cost, larger array size, higher operation temperature, and multiband detection, which presents big challenges to current HgCdTe infrared technology due to its various limitations. In this talk, I will introduce part of our recent effort at UWA on developing next generation HgCdTe infrared detectors and exploring their applications in on-chip chemical sensors. GaSb alternative substrate, novel “nBn” device architecture, and adaptive focal plane array were proposed to reduce the cost, increase the array size, enhance the operation temperature, and realize multicolor detection of HgCdTe detectors. HgCdTe on-chip chemical sensors were also explored by integrating HgCdTe waveguide and HgCdTe detector together. Some other alternative infrared detector technologies such as HgCdSe were also explored at UWA, and will be discussed in this talk as well.

个人简介：

雷文博士，西澳大利亚大学教授、博士生导师，澳大利亚研究协会（ARC）Future Fellow（类似于中国国家基金委的“杰青”），西澳大利亚大学电子材料与器件实验室主任。目前主要从事半导体红外光电技术、新型半导体纳米光电功能器件、能源转换与存储器件等方面的应用研究。

领导、参与并完成了多项澳大利亚、美国、德国和中国的科研项目，并在Applied Physics Reviews, Physical Review Letters, Small, Analytical Chemistry, Nanoscale, Applied Physics Letters等顶级期刊上发表论文70余篇，撰写英文专著两部，申请专利两项，并受邀在著名评论期刊Applied Physics Reviews (ISI影响因子: 14.3)上发表有关碲镉汞红外光电技术的评论，其成果被国内外同行广泛关注。其中，9篇论文成果被Nature Materials，Virtual Journal of Nanoscale Science and Technology，Journal of Technology and Science和Verticalnews等期刊选取报道和收录。

在低成本、大阵列、高工作温度以及多色探测的第三代碲镉汞红外成像技术研究方面取得了多项突破，其研究成果受到国际同行和专业媒体的广泛关注，是在碲镉汞红外光电技术方面具有国际视野的创新型科学家。受邀担任5种国际知名期刊的编辑及客座编辑，受邀在多所国外大学及国际会议上作学术报告，并受邀担任20余种知名国际期刊的特邀审稿人以及4个国家和地区的科研项目评审人。